Abstract
AbstractA stacked CMOS‐type active pixel sensor (SCAPS) for charged particles has been developed. The SCAPS is an integral‐type detector that has several advantages over conventional systems, including two‐dimensional detection, wide dynamic range, no insensitive time, direct detection of charged particles and a high degree of robustness. The output characteristics of the SCAPS for incident charged particles has been analysed both theoretically and experimentally. The relationships between the output voltage of the SCAPS and the number of incident charged particles were formulated by including corrections for the non‐ideal characteristics of transistors in a pixel. The fluctuation of output characteristics of the SCAPS was evaluated experimentally by irradiation of secondary 4.5 keV Si+ ions generated by SIMS. The function was used to determine the number of incident ions into each SCAPS pixel within twice the statistical error. The SCAPS is useful as a two‐dimensional detector for microanalysis, such as stigmatic SIMS. Copyright © 2001 John Wiley & Sons, Ltd.
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