Abstract

The influence of various physical and technological parameters on the oscillatory behaviour of the Fowler-Nordheim tunneling current is investigated in ultra thin gate oxides. More specifically, the amplitude and the quasi-period of the oscillations are studied for oxide thickness varying from 3.8 nm to 7 nm, measurement temperatures from 80 K to 450 K and after stress induced electrical degradation. Besides, in order to interpret the experimental results, a modeling of the quantum Fowler-Nordheim oscillations is conducted based on the analytical Airy function approximation. This model is extended to include the temperature effect of the F-N component and the scattering induced quantum interference attenuation.

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