Oscillatory acoustic phonon relaxation of excitons in quantum dot molecules

Abstract

We study electrically tunable self-assembled InAs quantum dot molecules through photoluminescence (PL) and time-resolved PL measurements. For the model we assume quantum dots with cylindrical symmetry, for which the confinement potentials have been modeled as narrow quantum wells in the growth and in-plane directions matched to parabolic potentials. We focus on the hole scattering rates by bulk acoustic phonons, as these rates are the leading contribution for the neutral indirect exciton relaxation rate when the electron localizes primarily on one dot. The hole–phonon scattering structure factor for acoustic phonons is found to contain a phase relationship between the phonon wave and the hole wave function, which can be tuned by an external electric field. The phase relationship leads to interference effects and tunable oscillatory relaxation rates of indirect excitons, in agreement with experiments.