Abstract
The oscillator strength of dipole transitions of donors in silicon and germanium and of acceptors in germanium is calculated in the effective-mass approximation. A point-charge potential including variable screening allows one to adjust the ground state to the range of experimental binding energies and to explore the effect of the central-cell correction on the oscillator strength. Calculated f values are listed up to 7${p}_{\ifmmode\pm\else\textpm\fi{}}$ for the different group-V donors and up to 9${\ensuremath{\Gamma}}_{8}^{\mathrm{\ensuremath{-}}}$ for the different group-III acceptors. A comparison with recent experimental oscillator strengths is made. The results are in fair agreement with the experimental data concerning the structure of the spectra and the chemical trend of the absorption cross section. The assignment of the C line and the A multiplet in the spectrum of acceptors in germanium is substantiated.
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