Abstract
The far-IR absorption spectrum of elemental shallow donors and acceptors in germanium has been studied as a function of the dopant concentration (10 12–10 14 at/cm 3). The integrated absorption cross section and the oscillator strength have been determined for the main transitions from the ground state. The oscillator strengths decrease gradually in the sequences Sb, P, As and B, Al, Ga, In, i.e. with the ground state becoming gradually deeper. Absorption spectra of compensated samples are also presented, illustrating the effect of band-gap illumination on the relative line strengths of the compensated as well as the compensating impurities.
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