Abstract
Electrical oscillations appear in the NDR-region of the current controlled I– U characteristic of the α-Si/Si(p)/Si(n) device. The corresponding attractor is characterized by its correlation- and minimum embedding dimension, ν and m min, respectively. As the voltage U BE, applied in the Si(p)-region increases, m min remains constant, equal to 2, and ν increases obtaining always non-integer values, lower than m min.
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