Abstract
By changing the microwave circuitry, appreciable power at fundamental frequencies from 4 Gc/s to 31 Gc/s has been obtained from a single Gunn diode. A tentative explanation is given by assuming that the r.f. voltage is comparable to the bias voltage. The r.f. voltage then triggers both the formation and quenching of the high-field domain which is a characteristic feature of Gunn oscillations.
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