Abstract
AbstractThe effects of a second harmonic resonance circuit on IMPATT oscillator characteristics have been investigated. The admittance of an IMPATT diode is measured using an injection locking method simultaneously at the fundamental and second harmonic frequencies. A computer analysis, approximating the p+nn+ IMPATT structure with a Read diode, is carried out and the results are compared with the experiment. The theory agrees well with the experiment and has revealed characteristics of IMPATT diodes in the presence of an ac voltage component at second harmonic frequency. It is found that the negative conductance at the fundamental frequency is increased by properly selecting the load admittance at the second harmonic frequency. Characteristics of an IMPATT oscillator with a second harmonic resonance circuit at microwave and millimeter wave frequencies then are examined based on the computer simulation. The output power at the fundamental frequency varies over 10 dB when the second harmonic circuit conditions are varied near the resonance condition. The output power at fundamental frequency can be made a few decibels higher for optimized admittance at the second harmonic circuit than under off‐resonance conditions. Considerable output power at the second harmonic frequency is obtained under the above resonance conditions, and is described in detail.
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More From: Electronics and Communications in Japan (Part I: Communications)
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