Abstract
Two special Raman modes at 197 cm−1 and 255 cm−1 have been observed and discussed for a long time without persuasive conclusion in dilute nitride materials. In this work, using Raman spectroscopy and transmission electron microscopy (TEM), we studied Molecular Beam Epitaxy grown GaAsN/GaAs multiple quantum well samples with nitrogen concentration ranging from 0.6% to 6.1% and undergoing post-growth rapid thermal annealing (RTA) processes in the temperature range of 650 °C–950 °C. We assigned these two modes to the double degeneracy Eg and Ag modes from arsenic crystalline clusters on sample surface according to the Raman measurements and TEM observations. The physical mechanisms involved in the RTA processes at different temperatures were proposed.
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