Abstract
The origin of nitrogen acceptor compensation in ZnSe:N has been studied by secondary ion mass spectrometry (SIMS) and infrared absorption (FTIR) measurements. Nitrogen-doped ZnSe layers were grown by atmospheric pressure metalorganic chemical vapor deposition. Ammonia gas was used as a nitrogen source. SIMS analysis has revealed that hydrogen was incorporated only into the ZnSe:N layer with the same concentration as nitrogen. FTIR measurements at 11 K strongly suggest the presence of N—H bonding at 3193 cm−1. It is concluded that hydrogen passivation is responsible for the acceptor compensation.
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