Abstract
Negative capacitance FET (NCFET) can achieve the steeper subthreshold swing (SS) than conventional MOSFET for the reduction of supply voltage V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DD</sub> , while many experimental results indicate that NCFETs show the steeper SS only within a limited drain current range. In this work, the physical origin and parameter impacts of drain current range corresponding to steeper SS in NCFET are investigated, based on the modeling of domain switching dynamics of ferroelectric (FE). It is found that the larger remnant polarization is beneficial for the steeper SS with the larger drain current range. Besides, simulation results indicate that only within the limited window of sweeping rate and FE switching time, the drain current range can be enlarged for the steeper switching in NCFET.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
