Abstract
The surface defect and carrier concentrations of Nb‐doped SrTiO3 (NSTO) single crystals play an important role in its resistance switching (RS) properties. Herein, the RS of both 0.05 and 0.7 wt% Nb‐doped NSTO single crystals are studied. The hole defects on NSTO, which are characterized by electron paramagnetic resonance, increase with the enhanced Nb‐doping level. The hole defects with positive charges directly affect the RS characters of the Pt/NSTO junction by electron trapping/detrapping. The stability and discrimination of the resistance states are correlated with the interface state density and carrier concentration, which is controlled by the Nb‐doping level. The fundamental physical processes are proposed according to the experimental results.
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