Abstract
Nb-doped SrTiO3 showed interesting resistive switching phenomena, which could be modulated by either thermal treatment or doping level. The impacts of oxygen vacancies and dislocations on resistive switching were investigated by comparing the switching behaviors of as-prepared and air-annealed crystals with a variety of doping levels. It was found that both oxygen vacancies and dislocations may have effects on the switching depending on the doping level. It was dominated by oxygen vacancies for low doping and dislocations for high doping.
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