Abstract
The origin of RHEED intensity oscillation during homoepitaxial growth on GaAs(001) is studied on the basis of wave functions calculated with multiple scattering theory. At the most commonly used diffraction condition of glancing angle around 1° and incident electron energy of 15 keV, the origin is not unique and depends on the orientation of the step edges relative to the incident beam azimuth. When the step edges are perpendicular to the incident beam azimuth, the atomic density is the primary origin and the step density is a subsidiary one. When the step edges are parallel to the incident beam azimuth, the step density is the primary origin and the atomic density is a subsidiary one.
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