Abstract
The origin of the ion beam mixing effect, which causes the formation of smooth silicide films, is investigated for the Ti/Si solid-phase silicidation reaction. Ge ion beam mixing of a conventional Ti/c-Si structure with an oxide-contaminated interface shows an obvious effect when the implant conditions are such that the Ti/Si interface is amorphized. On the other hand, silicidation without ion mixing for Ti/a-Si and Ti/c-Si structures with oxide-free interfaces, prepared by sequential deposition in UHV, results in smooth and rough film surfaces, respectively. This strongly suggests that the ion beam mixing effect primarily comes from the amorphization of the Si substrate surface rather than the destruction of the interfacial oxide film.
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