Abstract
Effect of the growth-induced anisotropy field HKG has been investigated for the anomalous increase of the effective anisotropy field change Δ(Hk−4πMs) caused by annealing in heavily ion-implanted magnetic bubble garnets. In heavily implanted garnets, Δ(Hk−4πMs) increases with decreasing strain during annealing and does not follow the same curve that is obtained during implantation. The maximum difference in Δ(Hk−4πMs) between annealed and as-implanted samples corresponds to the value of Δ(Hk−4πMs) when the strain is reduced to zero by annealing. The anomalous increase is small in HKG-suppressed samples and is not observed in garnet films (YIG) without HKG. It is considered that the anomalous increase is due to suppression of the growth-induced anisotropy by heavy implantation. However, in the case of H+2 implantation the increase of Δ(Hk−4πMs) during the annealing process cannot be explained by the HKG suppression effect.
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