Abstract
Using the 1H(15N, αγ)12C reaction, we have realized a high-resolution profiling of depth distribution of hydrogen implanted into the magnetic bubble garnet (MBG) films. The experimental results are compared with predictions from the Monte-Carlo simulation code (TRIM85). We have investigated two phenomena by observing the thermal behavior of hydrogen in the MBG films: 1) the efficiency of the SiO2 layer deposited onto the MBG film to suppress the hydrogen out-diffusion and 2) the effect of plasma exposure on MBG films that have been predamaged by Ne irradiation. We have obtained useful knowledge to achieve a large anisotropy field change that plays an important role for the production of the magnetic bubble memory devices with high storage density. New features are reported to understand the thermal behavior of hydrogen in the MBG films.
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