Abstract
In this work, a resistive switching memory device, in which niobium (Nb) inserted into magnesium diboride (MgB2) multilayer constructed heterojunctions, was prepared by vacuum sputtering at 400 °C. Furthermore, a continuously enlarge memristor memory effect was observed in Ti/(MgB2/Nb)n/MgB2/Ti (n = 0, 1, 2, 3) devices with the increasing of the inserted Nb layers numbers for the first time. Finally, a model of Schottky barrier based on interfaces of Ti/MgB2 and Nb/MgB2 are used to explain the memory characteristics.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
