Oriented growth of diamond on (0001) surface of hexagonal GaN

Abstract

Oriented growth of diamond has been attempted on hexagonal GaN layers using conventional microwave plasma-assisted chemical vapor deposition (MP-CVD). GaN layers used as a substrate are grown on sapphire substrates by metal organic chemical vapor deposition (MO-CVD). Carburization, bias-enhanced nucleation and crystal growth processes are successively carried out. Oriented growth of diamond grains is demonstrated by the scanning electron microscopic image. It is suggested that an X-ray diffraction signal detected at 2θ=43.9° is due to the (111) face of diamond. Moreover, a Raman signal which peaked at 1333 cm −1 supports the growth of diamond.