Abstract
Oriented growth of diamond on hexagonal GaN thin films has been performed using microwave plasma-assisted chemical vapor deposition (MPCVD). GaN layers grown on sapphire substrates are utilized as a substrate. The growth process consists of three steps: (i) carburization, (ii) bias-enhanced nucleation (BEN) and (iii) deposition. Diamond synthesized on the GaN layer is characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). The SEM image shows oriented growth of diamond grains on the GaN substrate. A diffraction signal due to the (111) face of diamond is observed at 2θ=43.9°. A Raman signal peak at 1333 cm-1 confirms the growth of diamond. In addition, it is found by XRD and XPS measurements that carbon nitride is produced on the GaN substrate without growth of diamond grains.
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