Abstract
Abstract(‐201)‐oriented beta gallium oxide (β‐Ga2O3) thin films were grown on yttrium‐stabilized zirconia (YSZ) substrates using a mist chemical vapor deposition (CVD) method. The lowest full‐width at half maximum value in ω‐scan X‐ray diffraction was 0.50°, obtained for the growth temperature of 650 °C on a YSZ(100) substrate. Observation by a secondary electron microscope (SEM) revealed flat surface including large‐scale precipitates. Electron diffraction patterns suggested that thin films basically possess β‐type crystal structure though crystal precipitates were formed by poly‐crystal. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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