Abstract
We propose an optomechanical design, consisting of a parity-time symmetric multilayer structure tuned at exceptional-point degeneracy (EPD), with an adjustable layer that is coupled to micromechanical springs. The deflections of this layer in response to accelerations ${\alpha}$, lead to square-root resonance detuning ${\Delta}{\omega}\equiv{\omega}-{\omega}_{EPD}\propto \sqrt{\alpha}$ - thus dramatically enhancing the probe of ultra-small accelerations ${\alpha}\ll1$. Our design is scalable and can, in principle, support higher $N$ order EPDs with sensitivity ${\Delta}{\omega}\propto\sqrt[n]{\alpha}$. It also provides a pathway towards a new generation of on-chip hypersensitive accelerometers and vibrometers.
Highlights
The monitoring of directional acceleration is essential for a variety of technological applications, ranging from navigation devices, gravity gradiometry, and earthquake monitoring, to intruder detection, airbag deployment sensors in automobiles, and consumer electronics protection [1,2,3,4]
We propose a class of on-chip optomechanical accelerometers that utilize concepts from non-Hermitian
This is a consequence of the PT -symmetry, which essentially renormalizes the coupling between the cavity modes, promoting the formation of an exceptional points (EPs) degeneracy
Summary
The monitoring of directional acceleration is essential for a variety of technological applications, ranging from navigation devices, gravity gradiometry, and earthquake monitoring, to intruder detection, airbag deployment sensors in automobiles, and consumer electronics protection [1,2,3,4]. The sensitivity of the device can be increased by modifying the design in such a way that few neighboring silicon layers are attached to the test-mass and move together farther from or closer to the rest of the stack once acceleration is applied. This will result in a thickness variation of the air spacer layer located closer to the defect silicon layer S2. Since the electric field is exponentially enhanced in the vicinity of the defect layers, in this case the same thickness variation (applied acceleration) will lead to much stronger resonant shift detuning of the cavity formed by the layer S2 compared with the case discussed above
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