Abstract
Generation of extra facets on ridge-type triangles with (001)-, (110)-, and (201)-related equivalent slopes on GaAs (111) A substrates and stripes running in the [1̄10], [110], and [100] directions on (001) substrates during molecular beam epitaxy of GaAs/AlGaAs multilayers was investigated. By investigating local variation in layer thickness in the regions adjacent to extra (114)A, (110), and (1̄1̄1̄)B facets common to the (111)A and (001) patterned substrates and extra facets specific to the respective substrates and growth rates of the facets relative to the growth rate on the substrate plane, the orientation-dependent Ga surface diffusion length, λGa, was elucidated as λGa(001)≈λGa(1̄1̄3̄)B<{λGa(1̄1̄1 ̄)B,λGa(3̄3̄1̄)B,λGa(013),λGa(113)A}<λGa(159)≈λGa(114)A≈λGa(111)A<λGa(110). That is, λGa increases in the order of the (001), (1̄1̄1̄)B-related, (111)A-related, and (110) surfaces.
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