Abstract
The growth behavior of Ar-ion-laser-assisted metalorganic molecular beam epitaxy (MOMBE) of (001) GaAs, in the temperature range 330–450°C with triethylgallium (TEGa) and As 4, was studied by monitoring the specular-beam intensity oscillations of reflection high-energy electron diffraction (RHEED), with the laser turned on and off. The decomposition rate of TEGa is enhanced under Ar + laser irradiation. The Ar + laser also enhances the surface migration of adsorbates and arsenic desorption. In the arsenic-controlled growth regime, the growth rate increases monotonically at low laser power and tends to saturate at high laser power due to a balance between enhanced decomposition of TEGa and desorption of arsenic.
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