Abstract
Samarium doped bismuth titanate thin films with the composition of Bi3.25Sm0.75Ti3O12 and with strong preferred orientations along the c axis and the (117) direction were fabricated on Pt∕TiO2∕SiO2∕Si substrate by pulsed laser ablation. Measurements on Pt∕BSmT∕Pt capacitors showed that the c-axis oriented film had a small remanent polarization (2Pr) of 5μC∕cm2, while the highly (117) oriented film showed a 2Pr value of 54μC∕cm2 at an electrical field of 268kV∕cm and a coercive field Ec of 89kV∕cm. This is different from the sol-gel derived c-axis oriented Bi3.15Sm0.85Ti3O12 film showing a 2Pr value of 49μC∕cm2.
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