Abstract
Point defects, impurities, and defect–impurity complexes in diamond microcrystals were studied with the cathodoluminescence (CL) spectroscopy in the scanning electron microscope, photoluminescence (PL), and Raman spectroscopy (RS). Such defects can influence the directions that microcrystals are grown. Micro-diamonds were obtained by a hot-filament chemical vapor deposition (HF CVD) technique from the methane–hydrogen gas mixture. The CL spectra of diamond microcrystals taken from (100) and (111) crystallographic planes were compared to the CL spectrum of a (100) oriented Element Six diamond monocrystal. The following color centers were identified: 2.52, 2.156, 2.055 eV attributed to a nitrogen–vacancy complex and a violet-emitting center (A-band) observed at 2.82 eV associated with dislocation line defects, whose atomic structure is still under discussion. The Raman studies showed that the planes (111) are more defective in comparison to (100) planes. What is reflected in the CL spectra as (111) shows a strong band in the UV region (2.815 eV) which is not observed in the case of the (100) plane.
Highlights
Diamond is characterized by a unique combination of physical properties, making it a promising material with possible versatile applications
We present the investigation of single diamond microcrystal properties grown by hot filament chemical vapor deposition method (HF chemical vapor deposited diamond layers (CVD))
The properties of diamond microcrystallites obtained by the hot-filament chemical vapor deposition (HF CVD) method were compared with those of a single diamond crystal purchased from Element Six
Summary
Diamond is characterized by a unique combination of physical properties, making it a promising material with possible versatile applications. It is widely known for its hardness. There still exist some limitations on the performance of diamond electronic device applications. They are because the chemical vapor deposited diamond layers (CVD) contain a high concentration of different defects types. The source of these defects may be the lattice irregularities, vacancies, stacking faults, intentional doping, or interstitial impurities created
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