Orientation control of Platinum electrode grown on silicon using [Ca2Nb3O10]− nanosheets as seed layer.

Abstract

Platinum (Pt) is a noble metal with low resistivity and resilience to oxidation, which is largely used in microelectronic devices. In order to facilitate the integration of Pt thin films on silicon substrate, we are showing the ability to control their orientation by using [Ca2Nb3O10]− nanosheets (CNOns) as seed layer. Pt thin films were sputtered on silicon coated by CNOns (CNOns/SiO2/Si), and on TiO2/SiO2/Si substrates for comparison, at temperatures ranging from room temperature up to 625°C. Under pure argon, highly (111) textured Pt thin films were obtained on both substrates, regardless of the deposition temperature. However, by using an oxygen/argon mixture, highly (200) textured films could be obtained, only on CNOns/SiO2/Si substrate, when the substrate temperature is above 550°C. X-ray diffraction, scanning electron microscopy, and atomic force microscopy were used to characterize the crystalline quality, thickness, surface morphology and roughness of the Pt thin films. Their resistivity was measured at room temperature by the four-point probes method.