Abstract
InAs1−xBix with x≤0.026 and InAs1−x−ySbyBix with x≤0.017 and y≤0.096 have been successfully grown on InAs (100) oriented substrates by atmospheric pressure organometallic vapor phase epitaxy using the precursors trimethylindium, trimethylbismuth, trimethylantimony, and arsine. Good surface morphologies for both InAsBi and InAsSbBi epitaxial layers were obtained at a growth temperature of 400 °C. A key growth parameter is the V/III ratio. Only a very narrow range near 4 (considering the incomplete pyrolysis of AsH3) yields smooth InAsBi epilayers. Typical growth rates were 0.02 μm/min. X-ray diffractometer scans show clearly resolved Kα1 and Kα2 peaks for the layer of InAs0.889Sb0.096Bi0.015 grown on an InAs substrate with a graded transition layer to accommodate the lattice parameter difference. The half widths of the peaks are comparable to those of the substrate. For the first time, photoluminescence (PL) at 10 K from these Bi-containing alloys has been measured. The PL peak energy is seen to decrease with increasing Bi concentration at a rate of 55 meV/at. % Bi. InAsSbBi is a potential material for infrared detectors operating in the wavelength range from 8 to 12 μm.
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