Abstract
Single and multiple Ga0.4In0.6P/(Al0.4Ga0.6)0.5In0.5P quantum wells (QWs) have been grown using atmospheric pressure organometallic vapor phase epitaxy. The Ga0.4In0.6P well layers are coherently strained to match the lattice parameter of the GaAs substrate. Transmission electron microscopy measurements indicate that the QW layers are uniform in thickness and the interface is abrupt and free of misfit dislocations and defects. An upshift in photoluminescence (PL) peak energy is observed as the thickness of the well layer decreases, due to carrier confinement in the QW. Higher order X-ray diffraction satellite peaks and a narrow PL halfwidth are observed in a 20 layer multiple quantum well sample, indicating that the strained QWs are of high quality and the composition and thickness are under precise control during the growth process. Considering the effect of strain on the heterojunction band offsets, the PL peak energy of the strained QW can be described by a simple theory as a function of the well width.
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