Abstract
YBa 2Cu 3O 7 − δ thin films have been deposited In a low pressure chemical vapor deposition reactor at a total pressure of 5 Torr. Yttrium, barium and copper precursors were β — diketone chelates and argon was used as a carrier gas. The films were deposited on single crystal MgO substrates, with (100) orientation at a temperature of 825 °C. Four point probe resistivity measurements indicate zero resistance at 81 K and a narrow transition width (of the order of 2 K). Films deposited in the same conditions on SrTiO 3 (100) exhibit zero resistance at 89 K and a ΔT c of 0.8 K.
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