Abstract
Palladium thin-film deposition was carried out from the known precursors Pd(η3-C3H5)(Cp), and Pd(η3-C3H5)(hfa), where Cp is (η5-C5H5), cyclopentadienyl ligand and hfa is (CF3COCHCOCF3), hexafluoroacetylacetonato ligand. The use of a reactive gas such as dihydrogen led to unexpected low temperatures of deposition (30−60 °C). XPS and electron microprobe analyses revealed that low levels of carbon are incorporated to the palladium films. X-ray analyses showed crystalline deposits and scanning electron microscopy revealed grains of 300−1000 nm. Gas-phase analyses by mass spectrometry and GC/MS of deposition residues were realized to clarify the reaction mechanisms. Such a deposition process leads to metallic palladium with a good purity level.
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