Organometallic chemical vapor deposition of copper oxide thin films

Abstract

CU2O, CuO and Cu films were prepared by metal organic chemical vapor deposi­ tion (MOCVD) technique using copper acetylacetonate (Cu(acac)2) as the precursor. Depositions were performed at atmospheric pressure in an oxygen-rich environment. The films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy(XPS), Auger electron spectroscopy!AES), Fourier transform infrared spec­ troscopy (FTIR) and scanning electron microscopy(SEM). With a deposition temper­ ature of 360^C, CU2O films could be deposited at an oxygen partial pressure of 150 torr and a copper precursor partial pressure of 0.2 torr. XRD results indicate that the CugO films are polycrystalline, with a preferential [111] orientation. CuO films were deposited at 420*^0 with an oxygen partial pressure of 190 torr and a copper pressure of 0.2 torr. The CuO films have crystal grains randomly oriented at [111] and [111] planes. By using water vapor as a co-reactant, copper metal films could be deposited at temperatures above 380^C, with a water vapor pressure of 15 torr and a copper precursor pressure of 0.20 torr. XRD patterns indicated that most Cu films were polycrystalline and had a preferential orientation at [111] plane. Spec­ troscopic characterization results indicated the phase distribution in these MOCVD films was determined by the deposition temperature, precursor partial pressures, and co-reactants used (HgO or O2).