Abstract
As important industrial materials, the preparation of metallic copper and cuprous oxide (Cu2O) film is a hotspot in related fields. In this work, Cu2O and metallic copper films were controllably fabricated on the conductive substrate in an electrolyte containing 0.02 M cupric acetate and 0.1 M sodium acetate at different voltages. Linear sweep voltammetry test, as an effective way, was used to determine the selection of electrodeposition voltage. Pure Cu2O film can be prepared at a lower deposition voltage, and metallic copper film can be obtained at a higher deposition voltage and a longer deposition time. The obtained Cu2O film has complex surface morphology and exhibited n-type conductivity. The composition and morphology of the films were related to the deposition voltage. These results provide a new strategy and sight for the controllable preparation of cuprous oxide and metallic copper in the field of solar cells and integrated circuits.
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