Abstract
Abstract We report on three issues concerning the growth of GaAs AlAs lateral superlattices on vicinal surfaces to obtain quantum wires with negligible inter-wire tunnel coupling. We show that the ledge roughness increases with increasing terrace length and decreases for slower growth rates. The tilt angle of lateral superlattices is not the relevant parameter as long as electronic properties are concerned: one has to consider the product of the coverage error by the lateral superlattice thickness. The Ga flux stability is a critical parameter to be controlled. The use of dual-filament cells improves it by a factor two compared to single-filament ones.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
