Abstract
In this chapter, we discuss the growth processes that are involved in the direct deposition of lateral superlattices (LSL) and quantum wire superlattices (QWS). In the LSL, a nanometer scale band gap modulation is introduced in a direction parallel to the original growth surface. The QWS consists of a thin LSL layer sandwiched between two wider band gap semiconductor layers. The LSL and QWS are grown on vicinal surfaces by using fractional submonolayer depositions of two III-V compound semiconductors with different band gaps. As an introduction to the LSL structural properties, we extensively discuss the growth kinetic issues relating to the interface structure and chemistry for growth on singular and vicinal surfaces. The critical parameters controlling the size fluctuations and compositions in the LSL and quantum wire structures have been identified. Quantum confinement effects measured by optical methods in serpentine quantum wire superlattices are presented.
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