Abstract
ABSTRACTOrganically hybridized In2O3 thin films have been prepared. The surface of In2O3 thin films was hybridized by organic components with various kinds of functional groups. Upon exposure to CO gas, the electrical resistance of the hybrid sensor with amino group in the organic components increased (R-increasing response), whereas H2 gas caused the decreasing in the sensor resistance. No response was obtained to CH4 gas. For the n-type metal oxide semiconductors, the R-increasing response cannot be explained by the ordinary combustion mechanism. The response of R-increasing or R-decreasing to CO was controlled by functional groups of organic components as in the case of SnO2-based hybrid thin films. The approach of organic-inorganic hybridization is effective to realize the selective detection of reducing gas molecules.
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