Abstract
ABSTRACTRecent studies on organic thin-film transistors (OTFTs) have reported high mobility values, but many of them showed non-ideal current–voltage characteristics that could lead to the overestimation of the mobility values. In this study, the non-ideal transistor behavior was briefly investigated by considering the effect of charge injection, and a method of overcoming the effect was developed. Correspondingly, various charge injection layers were developed, and their effects on the modification of metal contacts, including work function tuning and interfacial doping, were studied. The materials that had been coated formed a good metal-semiconductor interface through fine manipulation in the wetting and dewetting of the selected liquid. With such electrodes, the OTFTs were fabricated at room temperature and exhibited almost ideal transistor behavior in terms of the current–voltage characteristics, featuring high (over 10 cm2/Vs) field-effect mobility.
Highlights
In organic thin-film transistors (OTFTs), surprisingly high mobility has been increasingly reported of late, from 40 to close to 100 cm2/Vs [1,2]
Such limitations raise the demand for ohmiccontact injection [8], which has not been achieved in most OTFTs or organic film-effect transistors (OFETs)
The non-ideal transistor behaviors in OTFTs can be understood by considering the charge injection process
Summary
In organic thin-film transistors (OTFTs), surprisingly high mobility has been increasingly reported of late, from 40 to close to 100 cm2/Vs [1,2]. A large contact resistance seriously suppresses the performance of thin-film transistors (TFTs) used for the back panel of active displays [6], sensors, memories, and other facile electronics, which require a low driving voltage and a high on–off ratio [7] Such limitations raise the demand for ohmiccontact injection [8], which has not been achieved in most OTFTs or OFETs. Such limitations raise the demand for ohmiccontact injection [8], which has not been achieved in most OTFTs or OFETs As a result, such transistors exhibit non-ideal current–voltage characteristics and are not suitable for circuit applications in display or sensor technologies. The resulting OTFT exhibited almost ideal transistor behavior, with high (over 10 cm2/Vs) field-effect mobility
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