Abstract

We are developing inkjet printing as a low cost, high throughput approach to the fabrication of single-layer organic memory devices. The organic memory devices were composed of a poly (Nvinylcarbazole) (PVK) film with Ag nanoparticles (NPs). The inkjet printing was introduced to embed Ag NPs in the PVK film. The organic memory devices exhibited the behavior of a resistive random access memory and on/off switching ratios of 103. This value was obtained through postannealing at 150 °C. The current-voltage characteristics of the devices revealed rewritable and bipolar memory effects during several sweeps of the voltage.

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