Abstract
An organic field-effect transistor (OFET) memory device based on pentacene is fabricated using an additional poly(α-methyl styrene) gate dielectric layer (PαMS, see figure) that has charge-trapping ability (an electret). The device has excellent non-volatile OFET memory characteristics, believed to originate from the stored charges in PαMS layer and transferred from the semiconductor to the polymeric gate electret.
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