Abstract
We have fabricated pentacene thin-film transistors (TFTs) with a gate dielectric such as cross-linked poly(vinyl alcohol) (c-PVA), with poly(9-vinylcarbazole) (PVK) buffer layer on a polyether-sulfone (PES) flexible substrate, and with substrate heating at a temperature below 120 °C, and we demonstrated the possibility of using an organic gate dielectric layer as a potential pentacene TFT with a PVK buffer layer for low-voltage operation on a plastic substrate. We report the excellent electrical properties of organic TFTs with a PVK buffer layer. The PVK buffer layer improves the performance of the devices and reduces the operating voltage of the devices. Our pentacene TFTs can be fabricated with mobilities >2.54 cm2/Vs and on/off current ratios >7.5E5 and with flexible organic dielectrics and substrates.
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