Organic ferroelectric gate field-effect transistor memory using high-mobility rubrene thin film

Abstract

An organic ferroelectric gate field-effect transistor (FET) memory has been fabricated using an organic semiconductor of rubrene thin film with a high mobility and a gate insulating layer of poly(vinylidene fluoride–tetrafluoroethylene) [P(VDF–TeFE)] thin film. A rubrene thin-film sheet was grown by physical vapor transport (PVT), and placed onto a spin-coated P(VDF–TeFE) thin-film layer, and Au source and drain electrodes were formed on this rubrene thin film. A hysteresis loop of the drain current–gate voltage (ID–VG) characteristic has been clearly observed in the ferroelectric gate FET, and is caused by the ferroelectricity. The maximum drain current is 1.5 × 10−6 A, which is about two orders of magnitude larger than that of the P(VDF–TeFE) gate FET using a pentacene thin film. Moreover, the mobility of this organic ferroelectric gate FET using rubrene thin film is 0.71 cm2 V−1 s−1, which is 35 times larger than that of the FET with pentacene thin film.