Organic ferroelectric field‐effect transistor memories with poly(vinylidene fluoride) gate insulators and conjugated semiconductor channels: a review

Abstract

AbstractOrganic electronics have attracted considerable interest because of their low temperature solution processability, versatile material synthesis and compatibility with a wide range of traditional fabrication methods such as rod‐coating, inkjet and roll‐to‐roll printing techniques. Organic ferroelectric field‐effect transistors (OFeFETs) with a three‐terminal device architecture have ferroelectric thin films as gate insulator layers and semiconductor films as charge transport channel layers. OFeFETs have been demonstrated with non‐volatile memory functions that can retain their high or low conductive states in the semiconductor channel when the power is turned off. The reversible polarization switching in the ferroelectric gate insulator layer between two stable polarized states provides the basis for binary coded memory functions. In this review, we summarize recent development of OFeFETs based on ferroelectric poly(vinylidene fluoride) dielectrics and organic semiconductor channels. © 2020 Society of Chemical Industry