Abstract
Abstractp‐Type and n‐type organic thin film transistors (OTFTs) and complementary inverter circuits with finely patterned electrodes are fabricated by reverse offset printing. The electrodes achieve a channel length of less than 3 µm under optimized printing conditions. High‐performance OTFTs are fabricated using these electrodes and printed p‐type and n‐type organic semiconductors, each achieving a mobility of 0.2 cm2 V−1 s−1 at a channel length of 50 µm. A complementary inverter circuit fabricated with a stacked OTFT structure is demonstrated using reverse offset printing. The inverter circuits successfully operate at a supply voltage as low as 2.5 V with a high signal gain of 14. These results are expected to contribute greatly to the development of integrated circuits with high‐speed operation using OTFTs.
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