Abstract
Dynamics of excess carriers, following a short excitation pulse, were recorded in shock-compressed [100] GaAs:Te to 4 GPa using time- and spectral-resolved photoluminescence (PL) measurements. PL signals extending over five orders of magnitude and comprising several recombination mechanisms were detected in single-event experiments. In marked contrast to earlier hydrostatic pressure results, a linear lifetime reduction was observed under uniaxial strain. The present results suggest that the lifetime reaches a minimum at the direct-to-indirect transition.
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