Abstract
Hetero-junctions between GaAs and GaInP were investigated, which had been grown by metal organic vapor-phase epitaxy (MOVPE) at a wide range of temperatures such that the GaInP had different long-range-order parameter ( η) values. Electron depth-profiles in the samples were characterized by capacitance–voltage ( C– V) measurement, and delta-shaped electron accumulation was observed at the interface between GaAs and GaInP, although both layers were grown undoped. It has been proven that the sheet concentration of this unexpected electron accumulation is strongly dependent on the η value of GaInP. Macroscopic polarization, caused by spontaneously polarized gallium-rich clusters in ordered GaInP, is attributed as being the reason for this electron accumulation.
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