Abstract
The authors report on the microstructures of semimetallic ErAs nanoparticles embedded in epitaxial InGaAs layers by codeposition of Er. The size of the particles (1–3nm) was approximately independent of the amount of deposited Er. At large ErAs concentrations (>3at.%), the particles showed a strong tendency to order on the {114} planes of the semiconductor matrix. The ordering was only observed along one of the ⟨110⟩ directions, likely reflecting the strong anisotropy in surface diffusion.
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