Abstract
Ga05In05P ternary alloys, lattice-matched to GaAs substrates, were grown by atomic layer epitaxy. The growth proceeded by the deposition of monolayers of In-P-Ga-P in a self-regulated fashion. The ternary alloys were found to have different crystal and bandgap structures depending on the growth conditions. Films deposited on (1 0 0) oriented GaAs substrates have a random (disordered) structure withEg ≈ 1.9 eV. However, the same ternary alloy deposited on misoriented substrates showed a high degree of ordering withEg ≈ 1.76 eV. The ordered structure is in the form of highly strained monolayer superlattices (InP-GaP) oriented along the (1 1 1) direction. The ordered-disordered transition can also be achieved by Se doping to the 1017 cm−3 range. We report on the atomic layer epitaxy growth conditions for both ordered and disordered GaInP films. We also discuss several possible quantum well structures based on this ternary alloy.
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