Abstract
We found high crystallographic selectivity in atomic layer epitaxy (ALE) growth of GaAs, in comparison with other epitaxial growth methods. In the temperature dependence of the GaAs growth rate, no GaAs growth on the GaAs (111)A and (110) planes was observed in the high temperature range under the condition of GaAs ALE growth on GaAs (100) plane. Also we discussed the mechanism of GaAs growth selectivity, which was believed to be caused by growth limitation due to As desorption. Due to the self-limiting effect and the high selectivity of ALE growth, trapezoidal-shaped GaAs/AlGaAs quantum wire structures, with 20 nm thickness and 50 nm width, were successfully realized.
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