Abstract
Highly photoactive FeVO4 photoanodes with ordered nanoblock morphology and uniform Ti-doping were prepared by drop-casting mixed Ti and V precursors onto FeOOH nanorod films and following an annealing process. The results indicate that Ti4+ is uniformly doped into the FeVO4 lattice by substituting V5+ and provides an increased number of O2– vacancies. The optimized film thickness and doping level are 620 nm and 0.3%, respectively. Compared to the undoped sample, the Ti-doped photoanode showed ~ 219% enhancement in photocurrent at 1.0 V vs Ag/AgCl under back illumination of AM 1.5, reaching a state-of-the-art value of ~ 1.47 mA cm−2, and also achieved stable and efficient overall water splitting activity with evolution rates of 28.3 and 14.1 μmol cm−2h−1 for H2 and O2, respectively. The excellent PEC performance could be attributed to the remarkably enhanced charge carrier concentration and conductivity, and the facilitated charge transfer kinetics across the semiconductor/electrolyte interface, as a result of Ti-doping.
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