Abstract
Self-assembled ordered SiGe islands were obtained on two types of modulated Si(0 0 1) surfaces: the vicinal surface with step-bunching and the surface with periodic stripes or pits pre-patterned by holographic lithography or e-beam lithography. The intrinsic growth instability during Si homoepitaxy on vicinal Si(0 0 1) surfaces introduces quasi-periodic bunched steps, which serve as templates for the subsequent SiGe island growth. When only one dot row fits into one period, quasi-periodically ordered SiGe islands can be obtained. On pre-patterned substrates, it is found that islands preferentially grow at the bottom of trenches or pits, resulting in 1D or 2D ordered islands with homogeneous size. The arrangement of these ordered islands can be intentionally changed. By growing multilayer SiGe islands separated by thin Si spacer layers on pre-patterned substrates, three-dimensional island crystals can be realized. Such site-controlled islands are suited for a characterization of the properties of a single island and the interplay between islands after overgrowth, making feasible device applications on a single island and island ensembles.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
